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LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
KEY FEATURES Advanced InGaP HBT Single-Polarity Voltage Supply EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V) Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm P1dB ~ +26dBm across 5.15 - 5.85 GHz Total Current ~ 170mA for Pout=+18dBm at 5.25GHz Total Current ~ 200mA for Pout=+20dBm at 5.25GHz ACPR ~ -48dBc at 30MHz Offset at Pout=+18dBm Integrated Power Detector Complete On-Chip Input Match Simple Output Capacitor Match Small Footprint: 3x3mm2 Low Profile: 0.9mm
APPLICATIONS/BENEFITS
The LX5506B is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. It also features an on-chip output power detector to help reduce BOM cost and PCB board space for system implementations. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage
supply of 3.3V (nominal), with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506B is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506B an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications.
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IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
PRODUCT HIGHLIGHT
FCC U-N11 Wireless IEEE 802.11a HiperLAN2
PACKAGE ORDER INFO
LQ
Plastic MLPQ 16-Pin
RoHS Compliant / Pb-free
LX5506B LX5506B
LX5506BLQ
Note: Available in Tape & Reel. Append the letters "TR" to the part number. (i.e. LX5506BLQ-TR) This device is classified as ESD Level 0 in accordance with MIL-STD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be observed when handling this device.
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
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DC Supply Voltage, RF Off...............................................................................6V Collector Current ........................................................................................500mA Total Power Dissipation....................................................................................3W RF Input Power........................................................................................... 15dBm Thermal Resistance (Junction-to-Case, JC).................................................6C/W Maximum Junction Temperature (TJ max) .................................................. 150C Operation Ambient Temperature .......................................................-40 to +85C Storage Temperature.......................................................................... -65 to 150C
Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure). 260C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.
LQ PACKAGE
(Bottom View)
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION Name RF IN VCC VB1 VB2 VB3 DET RF OUT VC1 VC2 VC3 GND NC Pin # 2, 3 4 5 6 7 9 10, 11 16 15 14 Center Metal 1, 8, 12,13 Description RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). Bias control voltage for the first stage. Bias control voltage for the second stage. Bias control voltage for the third stage. Detector output for the third stage PA output power. RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage. DC supply voltage for the first stage amplifier. DC supply voltage for the second stage amplifier. DC supply voltage for the third stage amplifier. The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. These pins are unused and not connected to the device inside the package. They can be treated either as open (floating) pins, or connected to ground metal.
PACKAGE DATA PACKAGE DATA
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vc = 3.3V, Vref=2.9V, Icq = 90mA, and TA = 25C
PARAMETER Frequency Range Output Power at 1dB Compression Power Gain at Pout=+18dBm EVM at Pout=+18dBm Total Current at Pout=+18dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Detector Response Ramp-On Time Pout = +18dBm Pout = +18dBm Pout = +18dBm 10~90% DET tON Over 200MHz -40 to +85 C
o
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CONDITION
SYMBOL f Pout Gp
MIN. 5.15 25
TYP. 26 25 2.5 170 90 4.2 24 +/-0.5 +/-1 -15 -8 -40 -40 -40 1.6 100
MAX. 5.35
MIN. 5.7 25
TYP. 26 21 3 180 90 4.2 20 +/-0.5 +/-0.5 -10 -10 -40 -40 -40 2.2 100
MAX. 5.85
UNIT GHz dBm dB % mA mA mA dB dB dB dB dB dB dBc dBc V ns
64QAM/54Mbps Ic_total Icq For Icq=90mA Iref S21 S21 S21 S11 S22 S12
Note: All measured data was obtained on a 10 mil GETEK evaluation board.
PACKAGE DIMENSIONS
LQ
16-Pin MLPQ 3x3 (75 x 75 mil DAP)
D
b
E
D2
E2 e A1 A3 A
K L
Dim A A1 A3 b D E e D2 E2 K L
MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.55 1.80 1.55 1.80 0.2 0.35 0.50
INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.061 0.071 0.061 0.071 0.008 0.012 0.020
ELECTRICALS ELECTRICALS
Note:
1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006") on any side. Lead dimension shall not include solder coverage.
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
EVM & CURRENT VS POUT @ 5.25GHZ
10 9 8 7 EVM Ictotal 250 230 210 190
EVM & CURRENT VS POUT @ 5.85GHZ
10 9 8 7 EVM Ictotal 250 230 210 190
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Ictotal(mA)
Ictotal(mA)
EVM(%)
5 4 3 2 1 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
150 130 110 90 70 21
EVM(%)
6
170
6 5 4 3 2 1 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
170 150 130 110 90 70 21
Pout(dBm)
Pout(dBm)
VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.25GHz, 64QAM / 54 Mbps
VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.85GHz, 64QAM / 54 Mbps
Note: All EVM data are for OFDM signal of 64QAM/54Mbps from Yokogawa VG6000, and are actual measured data without any de-embedding. Source EVM is 1.4 - 1.8% for input power levels for test EVM & CURRENT VS FREQUENCY
5.0 4.5 4.0 3.5
EVM_Measured EVM_Deembedded Ictotal
TYPICAL POWER SWEEP @ 5.25GHZ
190 185 180 175 170 165 160 155 150 6 8 10 12 13 15 17 19 21
Ictotal(mA)
EVM(%)
3.0 2.5 2.0 1.5 1.0
Frequency (GHz)
VC = 3.3V, VREF = 2.9V, ICQ = 90mA, POUT = +18dBm, 64QAM / 54 Mbps
VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.25GHz, CW Input
TYPICAL POWER DETECT RESPONSE
2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 4 5 DET
TYPICAL S-PARAMETER @ ROOM TEMP
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0
Detector Output Voltage (V)
dB(S(1,2)) dB(S(2,2)) dB(S(1,1)) dB(S(2,1))
C CHARTS
Pout(dBm)
VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.25GHz, 64QAM / 54 Mbps
Frequency (GHz)
VC = 3.3V, VREF = 2.9V, ICQ = 90mA
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
SMALL SIGNAL GAIN OVER TEMP
SMALL SIGNAL VS SUPPLY VOLTAGE
25.5 25.4 S21 @ 5.25GHZ 25.3 25.2 25.1
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25 24 23 22
S21 @ 5.25GHz
+85C +25C -40C
25.0 24.9 24.8 24.7 24.6 24.5 24.4 24.3 24.2 24.1 24.0 3 3.1 3.2 3.3 3.4 3.5 3.6
S21 (dB)
21 20 19 18 17 16 15 5.15
5.25
5.35
5.45
5.55
5.65
5.75
5.85
Frequency (GHz)
VC = 3.3V, VREF = 2.9V, ICQ = 90mA @ Room Temperature
Supply Voltage Vc(V)
VREF = 2.9V, ICQ = 90mA for Nominal VC =-3.3V
SMALL SIGNAL VS. REF VOLTAGE
30 25 20 15
S21 @ 5.25GHz
QUESCENT CURRENT VS. REF VOLTAGE
170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Icq vref ~ 0.2mA mV Icq
S21 @ 5.25GHz
10
00 -05 -10 -15 -20 -25 -30 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3
PA "OFF"
PA "ON"
Vref (V)
VC = 3.3V, ICQ = 90mA for Nominal VREF = 2.9V
Icq (mA)
05
Vref (V)
VC = 3.3V, ICQ = 90mA for Nominal VREF = 2.9V
CHARTS CHARTS
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
TAPE AND REEL
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Tape And Reel Specification
O 1.50mm 1.75mm 4.00mm
Top View
5.5 0.05mm
3.30mm 12.00 0.3mm 3.30mm
O 1.50mm 1.10mm
8.00mm
Part Orientation
Side View
0.30mm
2.2mm O 13mm +1.5 -0.2 10.6mm
O 330mm 0.5
O 97mm 1.0
MECHANICALS MECHANICALS
13mm +1.5
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5506B
TM (R)
InGaP HBT 4 - 6GHz Power Amplifier
PRODUCTION DATA SHEET
NOTES
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NOTES NOTES
PRODUCTION DATA - Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time.
Copyright (c) 2003 Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7

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